A Study of Extended Defects in Surface Damaged Crystals

A Study of Extended Defects in Surface Damaged Crystals

Publication Type:

Journal Article

Source:

Crystals, Volume 8, Issue 2 (2018)

ISBN:

2073-4352

Abstract:

<p>We have analyzed by transmission electron microscopy silicon and GaAs crystals polished with sandpapers of different grain size. The surface damage induced a crystal permanent convex curvature with a radius of the order of a few meters. The curvature is due to a compressive strain generated in the damaged zone of the sample. Contrary to what was reported in the literature, the only defects detected by transmission electron microscopy were dislocations penetrating a few microns from the surface. Assuming the surface damage as a kind of continuous indentation, a simple model able to explain the observed compressive strain is given.</p>